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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF284/D
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN-PCS/cellular radio and wireless local loop. * Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts (PEP) Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = -29 dBc * Typical Single-Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts (CW) Power Gain = 9.5 dB Efficiency = 45% * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW) Output Power
N-Channel Enhancement-Mode Lateral MOSFETs
MRF284 MRF284S
30 W, 2000 MHz, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
CASE 360B-01, STYLE 1 (MRF284)
CASE 360C-03, STYLE 1 (MRF284S)
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 20 87.5 0.5 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.0 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1.0 10 Vdc Adc Adc Symbol Min Typ Max Unit
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 3
MOTOROLA RF (c) Motorola, Inc. 1997 DEVICE DATA
MRF284 MRF284S 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 200 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (in Motorola Test Fixture) Common-Source Power Gain (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz, VSWR = 10:1, at All Phase Angles) Gps 9 10.5 -- dB Ciss Coss Crss -- -- -- 43 23 1.4 -- -- -- pF pF pF VGS(th) VGS(q) VDS(on) gfs 2.0 3.0 -- 1.0 3.0 4.0 0.3 1.5 4.0 5.0 0.6 -- Vdc Vdc Vdc S Symbol Min Typ Max Unit
30
35
--
%
IMD
--
-32
-29
dBc
IRL
9
15
--
dB
Gps
9
10.4
--
dB
--
35
--
%
IMD
--
-34
--
dBc
IRL
9
15
--
dB
Gps
8.5
9.5
--
dB
35
45
--
%
No Degradation In Output Power
MRF284 MRF284S 2
MOTOROLA RF DEVICE DATA
VGG (BIAS) + +
B1
B2
B3
B4
B5
B6
VDD Supply) (DC + + _
C1 R1 -
C4 R2
C7 R3
C5
C8
C13 C15
R4 C12
R5 C14
R6 C17
L3
L4 Z13 C16 Z14 Z15 RF OUTPUT
L1 RF INPUT Z1 Z2 Z3 Z4 C6 C2 C3 Z5
L2 Z6 Z7 Z8 DUT
Z9
Z10
Z11
Z12
C10 C9
C11
B1 - B6 C1, C17 C2 C3, C9 C4, C14 C5, C15 C6, C16 C7, C12 C8, C13 C10 C11 L1 L2, L3 L4 R1 - R6 Z1 Z2
Ferrite Bead, Round 470 F, 63 V, Mallory Electrolytic Capacitor 0.6 - 4.5 pF Johansen Gigatrim Variable Capacitors 0.8 - 8.0 pF Johansen Gigatrim Variable Capacitors 0.1 F Chip Capacitor, KEMET 91 pF ATC RF Chip Capacitors, Case "B" 10 pF ATC RF Chip Capacitors, Case "B" 1000 pF ATC RF Chip Capacitors, Case "B" 5.1 pF ATC RF Chip Capacitors, Case "B" 2.7 pF ATC RF Chip Capacitors, Case "B" 0.4 - 2.5 pF Johansen Gigatrim Variable Capacitors 4 Turns, #27 AWG, 0.087 OD, 0.050 ID, 0.069 Long, 10 nH 9 Turns, #26 AWG, 0.080 OD, 0.046 ID, 0.170 Long, 30.8 nH 2 Turns, #24 AWG, 0.85 OD, 0.042 ID, 0.064 Long, 5.2 nH 12 Fixed Film Chip Resistor 0.08 x 0.13 0.145 x 0.080 Microstrip 0.680 x 0.080 Microstrip
Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Board
0.185 x 0.080 Microstrip 0.395 x 0.080 Microstrip 0.490 x 0.080 Microstrip 0.035 x 0.325 Microstrip 0.240 x 0.325 Microstrip 0.210 x 0.515 Microstrip 0.130 x 0.515 Microstrip 0.080 x 0.515 Microstrip 0.190 x 0.325 Microstrip 0.090 x 0.325 Microstrip 0.515 x 0.080 Microstrip 0.860 x 0.080 Microstrip 0.510 x 0.080 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Manufacturer; Arlon, P/N: GX0300-55-22, r = 2.55
Figure 1. Schematic of 1.93-2.0 GHz Broadband Test Circuit
MOTOROLA RF DEVICE DATA
MRF284 MRF284S 3
VSUPPLY + + R1 R3 + P1 Q1 R2 R4 Q2 R5 R6 + C9 C7 R7 C8 R8 C2 C4 C11 C13 R9 C10 R10 R11 C15 C16 VDD B1 B2 + C1 B3 B4 B5 VDD +
- L4 RF OUTPUT
L1 RF INPUT Z1 Z2 Z3 C3 L2 C5 Z4 Z5
L3 Z6 Z7 Z8 Z9 DUT
Z10
Z11
Z12
Z13
Z14 C14
Z15
Z16
C12 C6
C17
B1 - B5 C1, C9, C16 C2, C13 C3, C14 C4, C11 C5 C6 C7, C15 C8 C10 C12, C17 L1 L2 L3, L4 P1 Q1 Q2 R1 R2 R3 R4
Ferrite Bead, Round 100 F, 50 V, Electrolytic Capacitor, Sprague 51 pF, ATC RF Chip Capacitors, Case "B" 10 pF, ATC RF Chip Capacitors, Case "B" 12 pF, ATC RF Chip Capacitors, Case "B" 0.8 - 8.0 pF Variable Capacitor, Johansen Gigatrim 4.7 pF, ATC RF Chip Capacitor, Case "B" 91 pF, ATC RF Chip Capacitors, Case "B" 1000 pF, ATC RF Chip Capacitor, Case "B" 0.1 F, Chip Capacitor, KEMET 0.6 - 4.5 pF, Variable Capacitors, Johansen Gigatrim 4 Turns, #27 AWG, 0.087 OD, 0.050 ID, 0.069 Long, 10 nH 5 Turns, #24 AWG, 0.083 OD, 0.040 ID, 0.128 Long, 12.5 nH 9 Turns, #26 AWG, 0.080 OD, 0.046 ID, 0.170 Long, 30.8 nH 1000 Ohm Potentiometer, 1/2 W, 10 Turns Transistor, NPN, Motorola P/N: MJD31, Case 369A-10 Transistor, PNP, Motorola P/N: MJD32, Case 369A-10 360 , Fixed Film Chip Resistor 0.08 x 0.13 2 x 12 k, Fixed Film Chip Resistor 0.08 x 0.13 1 , Wirewound, 5 W, 3% Resistor 4 x 6.8 k, Fixed Film Chip Resistor 0.08 x 0.13
R5 R6 R7 - R11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Raw PCB Material
2 x 1500 , Fixed Film Chip Resistor 0.08 x 0.13 270 , Fixed Film Chip Resistor, 0.08 x 0.13 12 , Fixed Film Chip Resistor, 0.08 x 0.13 0.363 x 0.080 Microstrip 0.080 x 0.080 Microstrip 0.916 x 0.080 Microstrip 0.517 x 0.080 Microstrip 0.050 x 0.325 Microstrip 0.050 x 0.325 Microstrip 0.071 x 0.325 Microstrip 0.125 x 0.325 Microstrip 0.210 x 0.515 Microstrip 0.210 x 0.515 Microstrip 0.235 x 0.325 Microstrip 0.02 x 0.325 Microstrip 0.02 x 0.325 Microstrip 0.510 x 0.080 Microstrip 0.990 x 0.080 Microstrip 0.390 x 0.080 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Manufacturer; Arlon, P/N: GX-0300-55-22, r = 2.55
Figure 2. Schematic of 2.0 GHz Class A Test Circuit
MRF284 MRF284S 4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
40 Pout , OUTPUT POWER (WATTS) 35 30 25 20 15 10 5 0 0 0.5 1.0 VDD = 26 Vdc IDQ = 200 mA f = 2000 MHz Single Tone 2.0 3.0 1.5 2.5 Pin, INPUT POWER (WATTS) 3.5 Gpe Pout 14 G pe , GAIN (dB) , OUTPUT POWER (WATTS) Pout 13 12 11 10 9 8 7 6 4.0 45 4W 40 3W 35 2W 30 25 Pin = 1 W 20 15 VDD = 26 Vdc IDQ = 200 mA Single Tone
10 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 f, FREQUENCY (MHz)
Figure 3. Output Power & Power Gain versus Input Power
Figure 4. Output Power versus Frequency
IMD, INTERMODULATION DISTORTION (dBc)
- 50 - 60
3rd Order 5th Order 7th Order
G pe , GAIN (dB)
VDD = 26 Vdc IDQ = 200 mA - 30 f = 2000.0 MHz 1 f2 = 2000.1 MHz - 40
11 Gpe 10 9 8 7 6 16 Pout = 30 W (PEP) IDQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 18 24 20 22 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 26 IMD
-15 -20 -25 -30 -35 -40 28
- 70 - 80 0.1
1.0 10 Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus Output Power
Figure 6. Power Gain and Intermodulation Distortion versus Supply Voltage
IMD, INTERMODULATION DISTORTION (dBc)
- 20 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100 mA - 40 300 mA 200 mA - 50 IDQ = 400 mA - 60 0.1 1.0 10
13 IDQ = 400 mA G pe , POWER GAIN (dB) 12 300 mA
- 30
200 mA 11
10
9
100 mA
8 0.1
VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 1.0 10 Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus Output Power
Figure 8. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
MRF284 MRF284S 5
IMD, INTERMODULATION DISTORTION (dBc)
- 20
12
-10
TYPICAL CHARACTERISTICS
3 Tflange = 75C ID, DRAIN CURRENT (Adc) C, CAPACITANCE (pF) Tflange = 100C 2 100 Ciss
Coss 10
1 TJ = 175C 0 0 4 8 12 16 20 24 28 VDD, DRAIN SUPPLY VOLTAGE (Vdc)
Crss 1 0 4 8 16 12 20 24 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 28
Figure 9. DC Safe Operating Area
Figure 10. Capacitance versus Drain Source Voltage
60 50 40 30 20 10 0 -10 - 20 - 30 - 40 - 50 - 60 -70 - 80 - 90
Pout , OUTPUT POWER (dBm)
FUNDAMENTAL
3rd Order
VDD = 26 Vdc IDQ = 1.8 Adc f1 = 2000.0 MHz f2 = 2000.1 MHz 0 5 10 15 20 25 30 35 40 Pin, INPUT POWER (dBm) 45 50 55 60
Figure 11. Class A Third Order Intercept Point
MRF284 MRF284S 6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
EFFICIENCY (%) 3.0 INTERMODULATION DISTORTION (dBc) INPUT VSWR 2.0 1.0 11 10 9 Gp , GAIN (dB) 8 7 6 IMD 5 4 3 1920 VSWR 1940 1960 f, FREQUENCY (MHz) 1980 -40 2000 -36 Pout = 30 Watts (PEP) VDD = 26 Vdc, IDQ = 200 mA Two-Tone Frequency Delta = 100 kHz GAIN 45 40 35 30 -32
Figure 12. 1.92-2.0 GHz Broadband Circuit Performance
1.E+10 MTBF FACTOR (HOURS x AMPS 2 ) 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 0 100 150 200 250 TJ, JUNCTION TEMPERATURE (C) This graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperature have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. 50
Figure 13. MTBF Factor versus Junction Temperature
MOTOROLA RF DEVICE DATA
MRF284 MRF284S 7
+ j1
+ j0.5
+ j2
+ j3
Zin
+ j0.2
2 GHz
+ j5
Zo = 1
0.0 0.2 0.5
+ j10
f = 1.8 GHz
1 2
2 GHz
3 5
ZOL* f = 1.8 GHz
- j10
- j0.2
- j5
- j3
- j0.5
- j2
- j1
VCC = 26 V, ICQ = 200 mA, Pout = 15 Wavg f MHz 1800 1860 1900 1960 2000 Zin(1) 1.0 + j0.4 1.0 + j0.8 1.0 + j1.1 1.0 + j1.4 1.0 + j2.3 ZOL* 2.1 - j0.4 2.2 + j0.2 2.3 + j0.5 2.5 + j0.9 2.6 + j0.92
Zin(1)= Conjugate of fixture base terminal impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency.
Figure 14. Series Equivalent Input and Output Impedence
MRF284 MRF284S 8
MOTOROLA RF DEVICE DATA
Table 1. Common Source S-Parameters at VDS = 26 Vdc, ID = 1.8 Adc f GHz GH
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6
S11 |S11|
0.902 0.934 0.948 0.957 0.959 0.960 0.958 0.958 0.956 0.954 0.944 0.934 0.935 0.945 0.944 0.946 0.941
f
-170 -167 -167 -169 -169 -170 -172 -172 -174 -175 -177 -177 -178 180 178 177 174
S21 |S21|
1.10 0.92 0.85 0.73 0.68 0.59 0.53 0.50 0.45 0.43 0.39 0.38 0.35 0.31 0.30 0.29 0.25
f
28 26 24 21 19 17 14 13 10 8 6 4 -1 -4 -5 -7 -11
S12 |S12|
0.005 0.006 0.007 0.009 0.011 0.014 0.015 0.016 0.019 0.020 0.023 0.023 0.013 0.016 0.023 0.024 0.025
f
60 82 89 94 94 94 92 93 92 90 82 72 72 116 112 105 112
S22 |S22|
0.913 0.921 0.924 0.929 0.931 0.933 0.936 0.936 0.937 0.937 0.937 0.935 0.932 0.925 0.930 0.935 0.930
f
-162 -163 -164 -165 -165 -167 -168 -169 -170 -171 -173 -174 -176 -179 -179 179 176
MOTOROLA RF DEVICE DATA
MRF284 MRF284S 9
NOTES
MRF284 MRF284S 10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
G -B-
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.790 0.810 0.220 0.240 0.125 0.175 0.205 0.225 0.050 0.070 0.004 0.006 0.562 BSC 0.070 0.090 0.215 0.255 0.350 0.370 0.120 0.140 MILLIMETERS MIN MAX 20.07 20.57 5.59 6.09 3.18 4.45 5.21 5.71 1.27 1.77 0.11 0.15 14.27 BSC 1.78 2.29 5.47 6.47 8.89 9.39 3.05 3.55
3 2
Q 2 PL 0.25 (0.010)
M
K H E
D N F
TA
M
B
M
C -T-
SEATING PLANE
DIM A B C D E F G H K N Q
-A-
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 360B-01 ISSUE O (MRF284)
1
-B-
2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F H K N INCHES MIN MAX 0.370 0.390 0.220 0.240 0.105 0.155 0.205 0.225 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.350 0.370 MILLIMETERS MIN MAX 9.40 9.91 5.59 6.09 2.67 3.94 5.21 5.71 0.89 1.14 0.11 0.15 1.45 1.70 2.16 2.92 8.89 9.39
K
D
E H
N
3
F C -T-
SEATING PLANE
-A-
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 360C-03 ISSUE B (MRF284S)
MOTOROLA RF DEVICE DATA
MRF284 MRF284S 11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
MRF284 MRF284S 12
MOTOROLA RF DEVICEMRF284/D DATA

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